High-
k oxide dielectric films have attracted intense interest for thin-film transistors (TFTs). However, high-quality oxide dielectrics were traditionally prepared by vacuum routes. Here, amorphous high-
k alumina (Al
2O
3) thin films were prepared by the simple sol-gel spin-coating and post-annealing process. The microstructure and dielectric properties of Al
2O
3 dielectric films were systematically investigated. All the Al
2O
3 thin films annealed at 300–600?°C are in amorphous state with ultrasmooth surface (RMS ~ 0.2?nm) and high transparency (above 95%) in the visible range. The leakage current of Al
2O
3 films gradually decreases with the increase of annealing temperature. Al
2O
3 thin films annealed at 600?°C showed the low leakage current density down to 3.9?×?10
?7 A/cm
2 at 3?MV/cm. With the increase of annealing temperature, the capacitance first decreases then increases to 101.1?nF/cm
2 (at 600?°C). The obtained
k values of Al
2O
3 films are up to 8.2. The achieved dielectric properties of Al
2O
3 thin films are highly comparable with that by vapor and solution methods. Moreover, the fully solution-processed InZnO TFTs with Al
2O
3 dielectric layer exhibit high mobility of 7.23?cm
2 V
?1 s
?1 at the low operating voltage of 3?V, which is much superior to that on SiO
2 dielectrics with mobility of 1.22?cm
2/V
?1 s
?1 at the operating voltage of 40?V. These results demonstrate that solution-processed Al
2O
3 thin films are promising for low-power and high-performance oxide devices.
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